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Typical Performance Characteristics
25 C
Figure 1. On-Region Characteristics
100
V GS = 15V
10V
8V
6V
4V
10
Figure 2. Transfer Characteristics
100
o
10
150 C
-55 C
o
o
2. T C = 25 C
1
*Notes:
1. 250 μ s Pulse Test
o
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
0.3
0.05 0.1
1 10
30
1
2
4 6
8
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150 C
300
o
250
10
25 C
200
150
V GS = 10V
V GS = 20V
o
*Notes:
*Note: T C = 25 C
100
0
20 40 60
o
80
1
0.4
1. V GS = 0V
2. 250 μ s Pulse Test
0.6 0.8 1.0
1.2
10
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
5
C oss
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
10
4
8
V DS = 120V
V DS = 300V
10
3
C iss
C rss
6
V DS = 480V
10
10
2
1
*Note:
1. V GS = 0V
2. f = 1MHz
C iss = C gs + C gd ( C ds = shorted )
4
2
C rss = C gd
10
C oss = C ds + C gd
0
0.1 1 10 100
V DS , Drain-Source Voltage [V]
600
0
0
10
*Note: I D = 12.5A
20 30 40 50
Q g , Total Gate Charge [nC]
60
?2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
3
www.fairchildsemi.com
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